Toshiba Announces 19nm Flash Memory

Posted by at 10:47 am on April 21, 2011

Toshiba late Wednesday revealed its first example of 19 nanometer NAND flash memory in a step that could lead to very high capacity smartphone and tablet storage. The two-bit-per-cell, 8GB per chip technology is the smallest ever and could double the capacity of mobile devices even before most have been using the previous upgrade. The extra-small size lets Toshiba stack 16 chips in a single package, leading to a single 128GB chip with twice as much storage as the previous best.

The advancement is slightly faster as well through Toggle DDR2.0 memory support that helps shuttle data. It can support three-bit-per-cell in the future to increase in density yet again, Toshiba said.

Despite being brand new, the 19nm flash is already being handed out to companies in test samples and should be in large-scale production during the summer.

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