Intel Ships Samples of 25nm, 3 bit per Cell Flash Memory

Posted by at 1:50 pm on August 17, 2010

Intel’s NAND flash memory to a larger step forward today with news it had made the first samples of three bit-per-cell (3BPC), 25 nanometer storage. The development made with Micron is denser still than existing 25nm memory and can hold 8GB of content with 20 percent less of a footprint than traditional storage. Media players, flash memory cards and USB drives could all increase in capacity without growing in size, Intel said.

The technology isn’t expected to have a direct effect on Intel’s solid-state drive roadmap, which will still need faster but lower density memory to produce 600GB SSDs in the same period

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